SiGe structure investigation using methods of X-ray diffraction and transmission electron microscopy

Zaysev D.V., Medvedev P.N., Lukinа E.A.
UDC
548.4
DOI
10.18577/2307-6046-2022-0-5-112-122
Article PDF (Russian) (1.38 MB)
How to cite
Zaysev D.V., Medvedev P.N., Lukinа E.A. SiGe structure investigation using methods of X-ray diffraction and transmission electron microscopy // Proceedings of VIAM. 2022. No. 5. DOI: 10.18577/2307-6046-2022-0-5-112-122. URL: https://test.viam.ru/en/journal/2022/5/10
Keywords
x-ray diffraction, transmission electron microscopy, crystal lattice, twins, stacking faults, SiGe solid solution, memristors
Abstract

The structure of the SiGe material used to create memristive structures has been studied by x-ray diffractometry and transmission electron microscopy. The phase composition of the material has been determined. Revealed the inhomogeneity of the SiGe solid solution. The lattice periods, the degree of lattice microstrain, and the volume fractions of the solid solution phases are calculated. Using transmission electron microscopy, the following have been investigated: grain structure, distribution of phases and defects in the volume of grains. The defects of the crystal lattice have been investigated, and the character of the inhomogeneity of the SiGe solid solution has been refined using local x-ray microanalysis.

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