Peculiarities of magnetron sputtering of metals in the presence of reactive gases

Dermel I.V., Shashkeev K.A.
UDC
669.017
DOI
10.18577/2307-6046-2017-0-11-11-11
Article PDF (Russian) (859.88 KB)
How to cite
Dermel I.V., Shashkeev K.A. Peculiarities of magnetron sputtering of metals in the presence of reactive gases // Proceedings of VIAM. 2017. No. 11. DOI: 10.18577/2307-6046-2017-0-11-11-11. URL: https://test.viam.ru/en/journal/2017/11/11
Keywords
magnetron sputtering, reactive gases, metal, semiconductor, oxide, magnetron.
Abstract

In this article, peculiarities of magnetron sputtering of metals and semiconductors in the presence of reactive gases are discussed. Aluminum, titanium, and silicon targets were used. Oxygen and atmospheric air dissolved in argon were used as reactive gases. An influence of oxygen and atmospheric fractions in the gas mixture on the discharge voltage and oxides’ deposition rate during sputtering was investigated.

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