Formation of silicon carbide coatings by chemical vapor deposition (review)

Part 1
Sidorov D.V., Shavnev A.A., Melentev A.A.
UDC
666.7
DOI
10.18577/2307-6046-2021-0-6-100-111
Article PDF (Russian) (703.55 KB)
How to cite
Sidorov D.V., Shavnev A.A., Melentev A.A. Formation of silicon carbide coatings by chemical vapor deposition (review). Part 1 // Proceedings of VIAM. 2021. No. 6. DOI: 10.18577/2307-6046-2021-0-6-100-111. URL: https://test.viam.ru/en/journal/2021/6/10
Keywords
chemical vapor deposition, silicon carbide, coating, literature review, chemical reaction, reagent.
Abstract

The article provides an overview of the scientific and technical literature in the field of the formation of silicon carbide coatings by chemical vapor deposition (CVD). CVD is a complex process, approaches to which vary depending on the tasks being solved. Depending on the technological parameters, the initial reagents, the substrate for deposition, the type and design of the CVD reactors, it is possible to achieve both the deposition of pure silicon carbide and the co-deposition of silicon and/or carbon.

In the first part of the article, attention is paid to the study of CVD from the point of view of the mechanisms of chemical reactions, the design of the deposition apparatus, the substrates for deposition.

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