Formation of silicon carbide coatings by chemical vapor deposition (review)

Part 2
Sidorov D.V., Shavnev A.A., Melentev A.A.
UDC
666.7
DOI
10.18577/2307-6046-2022-0-2-88-98
Article PDF (Russian) (908.5 KB)
How to cite
Sidorov D.V., Shavnev A.A., Melentev A.A. Formation of silicon carbide coatings by chemical vapor deposition (review). Part 2 // Proceedings of VIAM. 2022. No. 2. DOI: 10.18577/2307-6046-2022-0-2-88-98. URL: https://test.viam.ru/en/journal/2022/2/7
Keywords
chemical vapor deposition, silicon carbide, coating, chemical reaction, reagent, kinetic, thermodynamic
Abstract

The article provides an overview of the scientific and technical literature in the field of the formation of silicon carbide coatings by chemical vapor deposition (CVD). CVD is a complex process, approaches to which vary depending on the tasks being solved. Depending on the technological parameters it is possible to achieve both the deposition of pure silicon carbide and the co-deposition of silicon and carbon, mixed coating In the article attention is paid to the study of CVD from the point of view of the kinetic and parameters for deposition and thermodynamic.

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