Implementation of technology for chemical vapor deposition of silicon carbide in electronics

Part 1
Sidorov D.V., Grunin А.А., Shavnev A.A.
UDC
666.7
DOI
10.18577/2307-6046-2024-0-3-101-116
Article PDF (Russian) (1.03 MB)
How to cite
Sidorov D.V., Grunin А.А., Shavnev A.A. Implementation of technology for chemical vapor deposition of silicon carbide in electronics. Part 1 // Proceedings of VIAM. 2024. No. 3. DOI: 10.18577/2307-6046-2024-0-3-101-116. URL: https://test.viam.ru/en/journal/2024/3/9
Keywords
silicon carbide, electronics, semiconductor, chemical vapor deposition, methods of growing crystals, epitaxy
Abstract

The comparative characteristics of modern semiconductor materials, the basic electrophysical properties of the applied silicon carbide polytypes, and the possibilities of using silicon carbide semiconductors in microelectronic devices are presented. The most common methods for producing silicon carbide crystals are considered, which are growing crystals from a melt, sublimation and chemical vapor deposition.

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