Features of obtaining a highly heat-resistant low shrinkage material based on chemically strengthened silicon carbide

Vikulin V.V., Gvozdev S.S.
UDC
661.665.1
DOI
10.18577/2307-6046-2025-0-12-53-62
Article PDF (Russian) (890.61 KB)
How to cite
Vikulin V.V., Gvozdev S.S. Features of obtaining a highly heat-resistant low shrinkage material based on chemically strengthened silicon carbide // Proceedings of VIAM. 2025. No. 12. DOI: 10.18577/2307-6046-2025-0-12-53-62. URL: https://test.viam.ru/en/journal/2025/12/5
Keywords
silicon carbide, sintering, silicon organic compound, nitriding, thermodynamic calculation, gas and vibration stands
Abstract

The article presents the features and regularities of the technology of obtaining highly heat-resistant low shrinkage silicon carbide by forming zones with different thermal conductivity in the porous structure of the material, increasing the strength and resistance to oxidation at temperatures up to 1600 °C, preventing the reduction of SiO2 by silicon carbide at high temperatures.

The dependences of density, linear shrinkage and amount of binder during of pre-sintered ceramic samples on the specific surface of silicon carbide powders are presented. The effect of pre-sintered ceramic density on the strength of samples at temperatures of 20, 1400 and 1500 °C is demonstrated. Data are presented on the effect of impregnation of silicon carbide with a silicon organic compound and high-temperature treatment of ceramic samples in a nitrogen environment and in air on increasing the strength characteristics and resistance of ceramics to oxidation.

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