Determination of silicon content in aluminium alloys by ICP-AES method in combination with microwave pre-treatment

Zagvozdkina T.N., Karachevtsev F.N., Dvoretskov R.M., Yakimova M.S.
UDC
669.715
DOI
10.18577/2307-6046-2014-0-12-10-10
Article PDF (Russian) (377.5 KB)
How to cite
Zagvozdkina T.N., Karachevtsev F.N., Dvoretskov R.M., Yakimova M.S. Determination of silicon content in aluminium alloys by ICP-AES method in combination with microwave pre-treatment // Proceedings of VIAM. 2014. No. 12. DOI: 10.18577/2307-6046-2014-0-12-10-10. URL: https://test.viam.ru/en/journal/2014/12/10
Abstract

Silicon is present in aluminum alloys in a wide range of concentrations – from a few hundredths of a percent in heat treatable alloys up to dozens of percent in casting alloys. Existing techniques for determination of silicon content in aluminum alloys are of low accuracy. To solve this problem, a method of silicon mass fraction measurement in aluminum-based alloys by atomic emission spectrometry with inductively coupled plasma (ICP-AES) in combination with microwave preparation of samples has been developed and certified. Mixture compositions for dissolving and microwave-induced decomposition parameters were selected. Limits of relative measurement error for Si mass fraction from 0,001 to 18% do not exceed 5% (±δ, at P=0,95).

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