Analysis of silicon by glow discharge high-resolution mass spectrometry
UDC
543.51:669.1
DOI
10.18577/2307-6046-2025-0-8-163-172
Article PDF (Russian)
(645.68 KB)
How to cite
Alekseev A.V., Yakimovitch P.V. Analysis of silicon by glow discharge high-resolution mass spectrometry // Proceedings of VIAM. 2025. No. 8. DOI: 10.18577/2307-6046-2025-0-8-163-172. URL: https://test.viam.ru/en/journal/2025/8/14
Keywords
high resolution glow discharge mass spectrometry, silicon, nickel alloys, determination of harmful impurities
Abstract
In this work, we have determined the impurities of 43 elements in silicon by high-resolution glow discharge mass spectrometry. The sample preparation for analysis is described. The analysts have selected the corresponding equipment settings to achieve maximum analytical signals from all the elements being sought. Spectral interferences have been eliminated by using high resolution. Relative sensitivity coefficients have been calculated for all the elements being determined using X-ray fluorescence spectroscopy.
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